Publications

2024

Low-Frequency Noise Metrology For The Development of High-Frequency Technologies and For High Purity Signal Generation

Jean-Guy Tartarin

ARFTG January 2024 • Invited speech

2023

Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms Environment

Ludovic Roche

WiPDA • October 2023 • Toulouse, France

Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNA: Application to X-Band GaN MMICs

Jean-Guy Tartarin

ICNF • October 2023 • Grenoble, France

Impact of RF stress on different topologies of 100 nm X-band robust GaN LNA

Bastien Pinault

ScienceDirect • Microelectronics Reliability • 115126

ESREF • October 2023 • Toulouse, France

Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches

Lucien Ghizzo

ScienceDirect • Microelectronics Reliability • 115172

ESREF • October 2023 • Toulouse, France

A Self-Reconfigurable Highly Linear and Robust X-Band MMIC GaN LNA

Bastien Pinault

EuMW • September 2023 • Berlin, Germany

A New Method for Designing Robust Low Noise Amplifier

Bastien Pinault

SMW • May 2023 • Noordwijk, Netherlands

Investigation of BVdss instability in trench power MOSFET through DLTS, electrical characterization and TCAD simulations

Marina Ruggeri

ISPSD• June 2023 • Hong Kong

Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurement

Gaëtan Toulon

WOCSDICE – EXMATEC• May 2023 • Palerme, Italy

Preconditionning of p-GaN power HEMT for reproducible Vth measurement

Lucien Ghizzo

ScienceDirect • Microelectronics Reliability • Volume 144

2022

Analyser la fiabilité des matériaux des composants grand gap

Marina Angel

Industries et technologies • no. 1053 • p. 19

Impact of 1 MeV proton irradiation on InGaAsN solar cells

M. Levillayer

Semiconductor Science and Technology • Volume 37

2021

Degradation study of InGaAsN PIN solar cell under 1 MeV electrons irradiation

M. Levillayer

IEEE Transactions on Nuclear Science

2020

Focus 2020 du LAAS  (Plateforme PROOF p36)