2024<\/strong><\/p>\n\n\n\n Low-Frequency Noise Metrology For The Development of High-Frequency Technologies and For High Purity Signal Generation<\/strong><\/a><\/p>\n\n\n\n Jean-Guy Tartarin<\/p>\n\n\n\n ARFTG January 2024 <\/strong>\u2022<\/strong> Invited speech<\/strong><\/p>\n\n\n\n 2023<\/strong><\/p>\n\n\n\n Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms Environment<\/strong><\/a><\/p>\n\n\n\n Ludovic Roche<\/p>\n\n\n\n WiPDA <\/strong>\u2022<\/strong> October 2023 <\/strong>\u2022<\/strong> Toulouse, France<\/strong><\/p>\n\n\n\n Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNA: Application to X-Band GaN MMICs<\/strong><\/a><\/p>\n\n\n\n Jean-Guy Tartarin<\/p>\n\n\n\n ICNF <\/strong>\u2022<\/strong> October 2023 <\/strong>\u2022<\/strong> Grenoble, France<\/strong><\/p>\n\n\n\n Impact of RF stress on different topologies of 100 nm X-band robust GaN LNA<\/strong><\/a><\/p>\n\n\n\n Bastien Pinault<\/p>\n\n\n\n ScienceDirect <\/strong>\u2022<\/strong> Microelectronics Reliability <\/strong>\u2022<\/strong> 115126<\/strong><\/p>\n\n\n\n ESREF <\/strong>\u2022<\/strong> October 2023 <\/strong>\u2022<\/strong> Toulouse, France<\/strong><\/p>\n\n\n\n Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches<\/strong><\/a><\/p>\n\n\n\n Lucien Ghizzo<\/p>\n\n\n\n ScienceDirect <\/strong>\u2022<\/strong> Microelectronics Reliability <\/strong>\u2022<\/strong> 115172<\/strong><\/p>\n\n\n\n ESREF <\/strong>\u2022<\/strong> October 2023 <\/strong>\u2022<\/strong> Toulouse, France<\/strong><\/p>\n\n\n\n A Self-Reconfigurable Highly Linear and Robust X-Band MMIC GaN LNA<\/strong><\/a><\/p>\n\n\n\n Bastien Pinault<\/p>\n\n\n\n EuMW <\/strong>\u2022<\/strong> September 2023 <\/strong>\u2022<\/strong> Berlin, Germany<\/strong><\/p>\n\n\n\n A New Method for Designing Robust Low Noise Amplifier<\/strong><\/a><\/p>\n\n\n\n Bastien Pinault<\/p>\n\n\n\n SMW <\/strong>\u2022<\/strong> May 2023 <\/strong>\u2022<\/strong> Noordwijk, Netherlands<\/strong><\/p>\n\n\n\n Marina Ruggeri<\/p>\n\n\n\n ISPSD<\/strong>\u2022<\/strong> June 2023 <\/strong>\u2022<\/strong> Hong Kong<\/strong><\/p>\n\n\n\n Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurement<\/strong><\/a><\/p>\n\n\n\n Ga\u00ebtan Toulon<\/p>\n\n\n\n WOCSDICE – EXMATEC<\/strong>\u2022<\/strong> May 2023 <\/strong>\u2022<\/strong> Palerme, Italy<\/strong><\/p>\n\n\n\n Lucien Ghizzo<\/p>\n\n\n\n ScienceDirect <\/strong>\u2022<\/strong> Microelectronics Reliability <\/strong>\u2022<\/strong> Volume 144<\/strong><\/p>\n\n\n\n 2022<\/strong><\/p>\n\n\n\n Analyser la fiabilit\u00e9 des mat\u00e9riaux des composants grand gap<\/strong><\/p>\n\n\n\n Marina Angel<\/p>\n\n\n\n Industries et technologies \u2022 no. 1053 \u2022 p. 19<\/strong> Impact of 1 MeV proton irradiation on InGaAsN solar cells<\/strong><\/a><\/p>\n\n\n\n M. Levillayer<\/p>\n\n\n\n Semiconductor Science and Technology<\/strong> \u2022 Volume 37<\/strong><\/p>\n\n\n\n 2021<\/strong><\/p>\n\n\n\n
Investigation of BVdss instability in trench power MOSFET through DLTS, electrical characterization and TCAD simulations<\/strong><\/a><\/p>\n\n\n\n
Preconditionning of p-GaN power HEMT for reproducible Vth measurement<\/strong><\/a><\/p>\n\n\n\n
<\/p>\n\n\n\n